PART |
Description |
Maker |
MGP2N60D_D ON1870 |
IGBT 1.5 AMPS 600 VOLTS From old datasheet system
|
ON Semi
|
1N60-TA3-T 1N60-TF3-T 1N60-TM3-T 1N60L-TN3-T 1N60 |
1.2 Amps, 600 Volts N-CHANNEL MOSFET 一点二安培00伏特N通道MOSFET
|
??『绉???′唤?????? Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
10N60L-X-TA3-T 10N60G-X-TA3-T 10N60L-X-TF1-T 10N60 |
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
7N60AL-X-TA3-T 7N60AG-X-TF1-T 7N60AL-X-TF1-T 7N60A |
7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
SDR936Z SDR939M |
30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-254AA 30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
SHF1406SMS SHF1402SMS SHF1403SMS SHF1404SMS SHF140 |
40 AMPS 200- 600 VOLTS 30 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTP10N60-D |
Power MOSFET 10 Amps, 600 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
3N60L-B-TA3-T 3N60 3N60-A-TA3-T 3N60-B-TA3-T 3N60L |
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 3安培00/650伏特N沟道功率MOSFET
|
Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
|
SFA60PME SFA40PME SFA50PME |
68 AMPS 400 - 600 VOLTS 40 nsec HYPER FAST PDSITIVE CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SDR9600S20 SDR9600S10 SDR9600S15 |
600 AMPS 1000 - 2000 VOLTS 25 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTD32N06-1 NTD32N06-1G NTD32N06T4G NTD32N06 NTD32N |
Power MOSFET 32 Amps, 60 Volts 32 Amps, 60 Volts, N−Channel DPAK
|
ONSEMI[ON Semiconductor]
|
MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压,点火绝缘栅双极型晶体管(D2PAK封装 点火IGBT一十九安培50伏特,(9A50V钳位电压,点火绝缘栅双极型晶体管(采用D2PAK封装)) Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压,点火绝缘栅双极型晶体管(TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|